探测器形式:Detector Sensing Element Only |
工作温度:14 to 140 F (-10 to 60 C) |
辐射探测器类型:Semiconductor Diode Detector |
产品类别:Radiation Detectors |
检测到的电离辐射类型:X-Ray |
可测活性范围:5 to 1000 KeV |
探测器形式:Detector Sensing Element Only |
工作温度:-4 to 158 F (-20 to 70 C) |
辐射探测器类型:Semiconductor Diode Detector |
产品类别:Radiation Detectors |
检测到的电离辐射类型:Gamma Ray |
可测活性范围:1 to 10000 KeV |
探测器输出:Count Rate |
探测器形式:Detector Sensing Element Only |
工作温度:-4 to 140 F (-20 to 60 C) |
辐射探测器类型:Semiconductor Diode Detector |
计数率:500-1200 cpm |
产品类别:Radiation Detectors |
检测到的电离辐射类型:Gamma Ray |
可测活性范围:1 to 10000 KeV |
探测器输出:Count Rate |
探测器形式:Detector Sensing Element Only |
工作温度:-4 to 140 F (-20 to 60 C) |
辐射探测器类型:Semiconductor Diode Detector |
计数率:500-1200 cpm |
产品类别:Radiation Detectors |
检测到的电离辐射类型:Gamma Ray |
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