Capacitance:1.5pF |
Dark Current:0.02 to 0.4 nA |
Diameter Of Photosensitive Surface:200;500 um |
Dissipation Power:1 mW |
Forward current:1 mA |
Operating Temperature:-20 to 85 C |
Operating Voltage:0.9 V |
Optimum Magnification Times:100 |
Response Time:0.3 ns |
Responsibility:35 to 50 A/W |
Reverse Breakdown Voltage:80 to 200 V |
Soldering Temperature:260 C |
Spectral width:400 to 1100 nm |
Storage Temperature Range:-55 to 125 C |
Working voltage temperature Coefficient:0.6 V |
Capacitance:1pF |
Dark Current:0.1 to 1.0 nA |
Diameter Of Photosensitive Surface:200;500 um |
Dissipation Power:1 mW |
Forward current:1 mA |
Operating Temperature:-20 to 85 C |
Operating Voltage:0.95 V |
Optimum Magnification Times:100 |
Response Time:0.6 ns |
Responsibility:50 to 55 A/W |
Reverse Breakdown Voltage:80 to 200 V |
Soldering Temperature:260 C |
Spectral width:400 to 1100 nm |
Storage Temperature Range:-55 to 125 C |
Working Voltage Temperature Coefficient:0.9 V |
Capacitance:1.5pF |
Dark Current:0.02 to 0.4 nA |
Diameter Of Photosensitive Surface:200;500 um |
Dissipation Power:1 mW |
Forward current:1 mA |
Operating Temperature:-20 to 85 C |
Operating Voltage:0.9 V |
Optimum Magnification Times:100 |
Response Time:0.3 ns |
Responsibility:35 to 50 A/W |
Reverse Breakdown Voltage:80 to 200 V |
Soldering Temperature:260 C |
Spectral width:400 to1100 nm |
Storage Temperature Range:-55 to 125 C |
Working Voltage Temperature Coefficient:0.6V |
Capacitance:1pF |
Dark Current:0.1 to 1.0 nA |
Diameter Of Photosensitive Surface:200;500 um |
Dissipation Power:1 mW |
Forward current:1 mA |
Operating Temperature:-20 to 85 C |
Operating Voltage:0.95 V |
Optimum Magnification Times:100 |
Response Time:0.6 ns |
Responsibility:50 to 50 A/W |
Reverse Breakdown Voltage:80 to 200 V |
Soldering Temperature:260 C |
Spectral width:400 to 1100 nm |
Storage Temperature Range:-55 to 125 C |
Working Voltage Temperature Coefficient:0.9 V |
Capacitance:1pF |
Dark Current:0.1 to 1.0 nA |
Diameter Of Photosensitive Surface:200;500 um |
Dissipation Power:1 mW |
Forward current:1 mA |
Operating Temperature:-20 to 85 C |
Operating Voltage:0.95 V |
Optimum Magnification Times:100 |
Response Time:0.6 ns |
Responsibility:50 to 50 A/W |
Reverse Breakdown Voltage:80 to 200 V |
Soldering Temperature:260 C |
Spectral width:400 to1100 nm |
Storage Temperature Range:-55 to 125 C |
Working Voltage Temperature Coefficient:0.9V |
Capacitance:1.5pF |
Dark Current:0.02 to 0.4 nA |
Diameter Of Photosensitive Surface:200;500 um |
Dissipation Power:1 mW |
Forward current:1 mA |
Operating Temperature:-20 to 85 C |
Operating Voltage:0.9 V |
Optimum Magnification Times:100 |
Response Time:0.3 ns |
Responsibility:35 to 50 A/W |
Reverse Breakdown Voltage:80 to 200V |
Soldering Temperature:260 C |
Spectral width:400 to1100 nm |
Storage Temperature Range:-55℃ to 125 C |
Working Voltage Temperature Coefficient:0.6 V |
Capacitance:1pF |
Dark Current:0.1 to 1.0 nA |
Diameter Of Photosensitive Surface:200;500 um |
Dissipation Power:1 mW |
Forward current:1 mA |
Operating Temperature:-20 to 85 C |
Operating Voltage:0.95 V |
Optimum Magnification Times:100 |
Response Time:0.6 ns |
Responsibility:50 to 55 A/W |
Reverse Breakdown Voltage:80 to 200 V |
Soldering Temperature:260 C |
Spectral width:400 to 1100 nm |
Storage Temperature Range:-55 to 125C |
Working Voltage Temperature Coefficient:0.6 V |
Capacitance:1 pF |
Dark Current:0.2 to 1.0 nA |
Diameter Of Photosensitive Surface:500 um |
Dissipation Power:1 mW |
Forward current:1 mA |
Operating Temperature:-20 to 80 C |
Operating Voltage:150 to 200 V |
Optimum Magnification Times:30 |
Response Time:2 ns |
Responsibility:13 A/W |
Reverse Breakdown Voltage:350 V |
Soldering Temperature:260 C |
Spectral width:400 to 1100 nm |
Storage Temperature Range:-40 to 100 C |
Capacitance:1.5 pF |
Dark Current:0.02 to 0.4 nA |
Diameter Of Photosensitive Surface:200 um;500 um |
Dissipation Power:1 mW |
Forward current:1 mA |
Operating Temperature:-20 to 85 C |
Operating Voltage:0.95 V |
Optimum Magnification Times:100 |
Response Time:0.3ns |
Responsibility:35 to 50 A/W |
Reverse Breakdown Voltage:80 to 200 V |
Soldering Temperature:260 C |
Spectral width:400 to 1100 nm |
Storage Temperature Range:-55 to 125 C |
Working Voltage Temperature Coefficient:0.6V/℃ |
Active Area:680 X 480 um |
Capacitance:1.5pF |
Dark Current:5.0 nA |
Forward current:1 mA |
Operating Temperature:-40 to 85 C |
Optical Wavelength Range:400 to 1100 nm |
Responsibility:0.4 to 0.5 A/W |
Reverse Current:5 mA |
Reverse Voltage:40 V |
Saturation power:≤0.3W/cm2 |
Soldering Temperature:260 C |
Storage Temperature Range:-40 to 85 C |
Active Area:1000 um |
Capacitance:1.5 pF |
Dark Current:2.0 nA |
Forward current:1 mA |
Operating Temperature:-40 to 85 C |
Optical Wavelength Range:400 to 1100 nm |
Responsibility:0.4 to 0.5 A/W |
Reverse Current:5 mA |
Reverse Voltage:60 V |
Saturation power:≤0.3W/cm2 |
Soldering Temperature:260 C |
Storage Temperature Range:-40 to 85 C |
surface uniformity:5% |
Aperture Size:190×10um2 |
Beam Divergence Parallel:8 to 10 |
Beam Divergence Perpendicula:25 to 30 |
Center wavelength:895 to 915 nm |
Duty cycle:0.1% |
Forward current:30 A |
Operating Temperature:-40 to 85 C |
Operating Voltage:20 to 25 V |
Peak output power:65 to 75 W |
Pulse width:200 ns |
Reverse Voltage:3 V |
Solder Reflow Temperature:260 C |
Spectral width:7 nm |
Storage Temperature Range:-40 至 100 C |
Threshold current:0.75 to 1 A |
Wavelength Temperature Coefficient:0.3 nm |
Aperture Size:190×10um2 |
Beam Divergence Parallel:8 to10 |
Beam Divergence Perpendicula:25 to 30 |
Center wavelength:895 to 915 nm |
Duty cycle:0.1% |
Forward current:max 40A Typ 30A |
Operating Temperature:-40 to 85 C |
Operating Voltage:15 to 20 V |
Peak output power:65 to 75W |
Pulse width:200 ns |
Reverse Voltage:3 V |
Solder Reflow Temperature:260 C |
Spectral width:7 nm |
Storage Temperature Range:-40 至 100 C |
Threshold current:0.75 to 1 A |
Wavelength Temperature Coefficient:0.3nm/℃ |
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